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FGL40N120AND Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V
GE
=
±15V,
R
G
=
5Ω
10
T
C
=
25°C
Eon
T
C
=
125°C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, I [A]
C
Figure 15. SOA Characteristics
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R
L
=
15Ω
T
C
=
25°C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
50µs
100
100µs
10
1ms
DC Operation
1
10
Single Nonrepetitive
0.1 Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 17. Forward Characteristics
100
T
J
=
125°C
10
T
J
=
25°C
1
T
C
=
125°C
T=
C
25°C
0.1
0
1
2
3
4
5
6
Forward Current , I [A]
F
Safe Operating Area
V
GE
=
15V,
T
C
=
125°C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 18. Reverse Recovery Current
10
8
di/dt = 200A/µs
6
4
di/dt = 100A/µs
2
0
0
10
20
30
40
50
60
70
Forward Current , I [A]
F
6
FGL40N120AND Rev. A
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