FGL40N120AND Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT

Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
6000
5000
Ciss
4000
3000
Common Emitter
V = 0V, f = 1MHz
GE
T
C
=
25°C
Figure 8. Turn-On Characteristics vs. Gate
Resistance
100
tr
2000
1000
Coss
Crss
0
1
10
Collector-Emitter Voltage, V [V]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10
0
td(on)
Common Emitter
V
CC
=
600V,
V
GE
=
±15V
I = 40A
C
T
C
=
25°C
T
C
=
125°C
10
20
30
40
50
60
70
Gate
Resistance,
R
G
[Ω]
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
CC
=
600V,
V
GE
=
±15V,
I
C
=
40A
T
C
=
25°C
T
C
=
125°C
td(off)
Common Emitter
V
CC
=
600V,
V
GE
=
±15V
I = 40A
C
10
T
C
=
25°C
T
C
=
125°C
Eon
100
Eoff
tf
1
10
0
10
20
30
40
50
60
70
Gate
Resistance,
R
G
[Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
Gate
Resistance,
R
G
[Ω]
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V
GE
=
±15V,
R
G
=
5Ω
100
T
C
=
25°C
tr
T
C
=
125°C
Common Emitter
V
GE
=
±15V,
R
G
=
5Ω
T
C
=
25°C
T
C
=
125°C
td(off)
100
tf
td(on)
10
20
30
40
50
60
70
80
Collector Current, I [A]
C
20
30
40
50
60
70
80
Collector Current, I [A]
C
5
FGL40N120AND Rev. A
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