FDS8958A_07 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Dual N and P-Channel PowerTrench MOSFET

Typical Characteristics: Q2 (P-Channel)
30
V_GS = -10V
-6.0V
V
-5.0V
V
-4.5V
20
V
-4.0V
10
-3.5V
-3.0V
0
0
1
2
3
4
5
6
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. On-Region Characteristics.
2
1.8
V_GS=-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
6
12
18
24
30
-I_D, DRAIN CURRENT (A)
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I_D = -5A
V_GS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 14. On-Resistance Variation with
Temperature.
0.25
I_D = -2.5A
0.2
0.15
0.1
0.05
T_A = 25^oC
T_A = 125^oC
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
15
V_DS = -5V
12
9
T_A = -55^oC
25^oC
125^oC
6
3
0
1
1.5
2
2.5
3
3.5
4
4.5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Transfer Characteristics.
100
10
1
0.1
0.01
V_GS =0V
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev F1 (W)