FDS8958A_07 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual N and P-Channel PowerTrench MOSFET

February 2007
FDS8958A
tm
Dual N & P-Channel PowerTrench^® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 30V R_DS(on) = 0.028Ω @ V_GS = 10V
R_DS(on) = 0.040Ω @ V_GS = 4.5V
• Q2: P-Channel
-5A, -30V R_DS(on) = 0.052Ω @ V_GS = -10V
R_DS(on) = 0.080Ω @ V_GS = -4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
D^D2DD2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
S_S1GS^{1 S}
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A
13”
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
30
30
±20
±20
7
-5
20
-20
2
2
1.6
1.6
0.9
0.9
54
13
-55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
mJ
°C
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8958A Rev F1(W)