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| FDS8858CZ Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ | |||
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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
300
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
-1---5---0-----â----T----A----
125
TA = 25oC
SINGLE PULSE
1
RθJA = 135oC/W
0.5
10-3
10-2
10-1
100
101
102
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
PDM
0.01
0.0003
10-3
SINGLE PULSE
RθJA = 135oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJA + TA
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
103
103
©2007 Fairchild Semiconductor Corporation
6
FDS8858CZ Rev.B
www.fairchildsemi.com
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