FDS8858CZ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ

FDS8858CZ
Dual N & P-Channel PowerTrench^® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
March 2007
Features
Q1: N-Channel
„ Max r_DS(on) = 17mΩ at V_GS = 10V, I_D = 8.6A
„ Max r_DS(on) = 20mΩ at V_GS = 4.5V, I_D = 7.3A
Q2: P-Channel
„ Max r_DS(on) = 20.5mΩ at V_GS = -10V, I_D = -7.3A
„ Max r_DS(on) = 34.5mΩ at V_GS = -4.5V, I_D = -5.6A
„ High power and handing capability in a widely used surface
mount package
„ Fast switching speed
General Description
These dual N and P-Channel enhancement mode power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Application
„ Inverter
„ Synchronous Buck
SO-8
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
D2 5
Q2
D2 6
D1 7
Q1
D1 8
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
T_A = 25°C
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T_A = 25°C
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1c)
Q1
Q2
30
-30
±20
±25
8.6
-7.3
20
-20
2.0
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Device Marking
FDS8858CZ
Device
FDS8858CZ
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDS8858CZ Rev.B
www.fairchildsemi.com