FDS4895C Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

Typical Characteristics: Q2 (P-Channel)
30
VGS = -10V
25
20
-6.0V
-4.5V
-4.0V
15
-3.5V
10
-3.0V
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2.6
2.4
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.5
ID = -4.4A
VGS = - 10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 13. On-Resistance Variation with
Temperature.
0.14
ID = -2.2A
0.12
0.1
TA = 125^oC
0.08
0.06
TA = 25^oC
0.04
0.02
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
25
VDS = -10V
20
15
TA = -55^oC
25^oC
125^oC
10
5
0
1.5
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
100
VGS = 0V
10
1
0.1
0.01
TA = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4895C Rev C(W)