|
FDS4895C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET | |||
|
June 2005
FDS4895C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductorâs advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
⢠Motor Control
⢠DC/DC conversion
Features
⢠Q1: N-Channel
5.5A, 40V RDS(on) = 39m⦠@ VGS = 10V
RDS(on) = 57m⦠@ VGS = 7V
⢠Q2: P-Channel
â4.4A, â40V RDS(on) = 46m⦠@ VGS = â10V
RDS(on) = 63m⦠@ VGS = â4.5V
⢠High power and handling capability in a widely
used surface mount package
DD2DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4895C
FDS4895C
13â
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
40
40
±20
±20
5.5
â4.4
20
â20
2
1.6
1
0.9
â55 to +150
78
40
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4895C Rev C(W)
|
▷ |