SGS23N60UFDTU Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – High speed switching

1000
Eoff
100
Eon
Eon
Eoff
10
4
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
23Ω
T = 25℃
C
T = 125℃
C
8
12
16
20
24
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 25 Ω
12 ^{TC = 25℃}
9
300 V
6
200 V
V_CC = 100 V
3
0
0
10
20
30
40
50
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
300
100 ^{IC MAX. (Pulsed)}
I_C MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1
Single Nonrepetitive
Pulse T_C = 25℃
Curves must be derated
0.1 ^{linerarly with increase}
in temperature
0.05
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
200
100
10
1
0.1
1
Safe Operating Area
V = 20V, T = 100℃
GE
C
10
100
Collector-Emitter Voltage, V [V]
CE
1000
Fig 16. Turn-Off SOA Characteristics
5
1 ^0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.01
single pulse
0.005
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGS23N60UFD Rev. A