SGS23N60UFDTU Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – High speed switching

1200
1000
800
Cies
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25℃
600
Coes
400
200
Cres
0
1
10
30
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 12A
C
T_C = 25℃
T_C = 125℃
Toff
Tf
Toff
100
50
1
Tf
10
Gate Resistance, R_G [Ω ]
100 200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 23Ω
100 T_C = 25℃
T = 125℃
C
Ton
Tr
10
4
8
12
16
20
24
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
200
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 12A
C
100
T = 25℃
C
Ton
T_C = 125℃
Tr
10
1
10
Gate Resistance, R_G [Ω ]
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
100
30
1
Eoff
Eon
Eon
Eoff
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 12A
T = 25℃
C
T = 125℃
C
10
100 200
Gate Resistance, R_G [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
23Ω
T_C = 25℃
T_C = 125℃
Toff
Tf
100
Tf
50
4
Toff
8
12
16
20
24
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS23N60UFD Rev. A