SGP23N60UFTU Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A

1000
100 ^Eoff
Eon
Eon
Eoff
10
4
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 23
T_C = 25℃
T_C = 125℃
8
12
16
20
24
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 25 
12 ^{TC = 25℃}
9
300 V
6
200 V
V_CC = 100 V
3
0
0
10
20
30
40
50
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
300
100 ^{IC MAX. (Pulsed)}
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
200
100
10
1
0.1
1
Safe Operating Area
V_GE = 20V, T_C = 100℃
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
5
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.005
10^-5
single pulse
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm  Zthjc + T_C
10⁰
10¹
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
5
SGP23N60UF Rev. C0
www.fairchildsemi.com