SGP23N60UFTU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A

Absolute Maximum Ratings T_C = 25C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25C
@ T_C = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25C
@ T_C = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
SGP23N60UF
600
 20
23
12
92
100
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
C
C
C
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.2
62.5
Unit
C/W
C/W
Electrical Characteristics of the IGBT T_C = 25C unless otherwise noted
Symbol
Parameter

Off Characteristics
Test Conditions
Min.
BV_CES
Collector-Emitter Breakdown Voltage V_GE = 0V, I_C = 250uA
600
B_VCES/
T_J
Temperature Coefficient of Breakdown
Voltage
V_GE = 0V, I_C = 1mA
--
I_CES
Collector Cut-Off Current
V_CE = V_CES, V_GE = 0V
--
I_GES

G-E Leakage Current
V_GE = V_GES, V_CE = 0V
--
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat)
Collector to Emitter 
Saturation Voltage

Dynamic Characteristics
I_C = 12mA, V_CE = V_GE
3.5
I_C = 12A, V_GE = 15V
--
I_C = 23A, V_GE = 15V
--
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V,
f = 1MHz
--
--
--

Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
--
V_CC = 300 V, I_C = 12A,
--
R_G = 23, V_GE = 15V,
--
Inductive Load, T_C = 25C
--
--
--
--
--
V_CC = 300 V, I_C = 12A,
--
R_G = 23, V_GE = 15V,
--
Inductive Load, T_C = 125C
--
--
--
Typ. Max. Unit
--
--
V
0.6
--
V/C
--
250
uA
-- ± 100 nA
4.5 6.5
V
2.1 2.6
V
2.6
--
V
720
--
pF
100
--
pF
25
--
pF
17
--
ns
27
--
ns
60 130
ns
70 150
ns
115
--
uJ
135
--
uJ
250 400
uJ
23
--
ns
32
--
ns
100 200
ns
220 250
ns
205
--
uJ
320
--
uJ
525 800
uJ
©1999 Fairchild Semiconductor Corporation
2
SGP23N60UF Rev. C0
www.fairchildsemi.com