SGP20N60RUF Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

Common Emitter
V =±
GE
15V,
R
G
=
10Ω
T = 25℃ ━━
C
T = 125℃ ------
C
1000
Eoff
Eoff
Eon
100
10
15
20
25
30
35
40
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
C
10
DC Operation
50㎲
100㎲
1㎳
1
Single Nonrepetitive
Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
15
Common Emitter
R
L
=
15
Ω
12 ^{TC = 25℃}
9
V = 100 V
CC
300 V
200 V
6
3
0
0
10
20
30
40
50
60
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
100
10
Safe Operating Area
V_GE = 20V, T_C = 100℃
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGP20N60RUF Rev. A1