SGP20N60RUF Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

2400
2000
1600
1200
Cies
Coes
Common Emitter
V = 0V, f = 1MHz
GE
T_C = 25℃
800
Cres
400
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 20A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Tf
Toff
100
1
Tf
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V_GE = ± 15V, R_G = 10Ω
T = 25℃ ━━
C
Ton
T = 125℃ ------
C
100
Tr
10
10
15
20
25
30
35
40
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 20A
C
T_C = 25℃ ━━
Ton
T = 125℃ ------
C
100
Tr
10
1
10
100
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Eoff
1000
Eon
Eoff
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 20A
C
T = 25℃ ━━
C
T = 125℃ ------
100
C
1
10
100
Gate Resistance, R_G [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Toff
Tf
Toff
Tf
100
10
15
Common Emitter
V =±
GE
15V,
R
G
=
10Ω
T = 25℃ ━━
C
T = 125℃ ------
C
20
25
30
35
40
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP20N60RUF Rev. A1