SGP13N60UFD Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

500
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
50Ω
T = 25℃
C
T_C = 125℃
100
Eon
Eon
Eoff
10
Eoff
5
0
2
4
6
8
10
12
14
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
46
Ω
Tc = 25℃
12
9
300 V
6
V_CC = 100 V
200 V
3
0
0
5
10
15
20
25
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
100
IC MAX. (Pulsed)
10 _{IC MAX. (Continuous)}
50us
100us
1㎳
1
DC Operation
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
0.1 linearly with increase
in temperature
0.05
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
1
0.1
1
Safe Operating Area
V =20V, T =100^oC
GE
C
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
10^-5
single pulse
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGP13N60UFD Rev. A1