SGP13N60UFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

600
Common Emitter
V = 0V, f = 1MHz
GE
500
T = 25℃
C
Cies
400
300
Coes
200
100
Cres
0
1
10
30
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
600
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 6.5A
T_C = 25℃
T_C = 125℃
100
Toff
Toff
Tf
Tf
50
1
10
100
300
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 50Ω
100 T_C = 25℃
T = 125℃
C
Ton
Tr
10
0
2
4
6
8
10
12
14
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
300
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 6.5A
C
T_C = 25℃
T_C = 125℃
Ton
100
Tr
10
1
10
100
400
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Eon
Eoff
Eon
Eoff
100
10
1
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 6.5A
T = 25℃
C
T = 125℃
C
10
100
400
Gate Resistance, R_G [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 50Ω
T_C = 25℃
T_C = 125℃
Toff
Toff
Tf
100
Tf
50
0
2
4
6
8
10
12
14
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP13N60UFD Rev. A1