SGP10N60RUF Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Eoff
100
Eon
5
10
15
20
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 30 Ω
T_C = 25℃
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0
10
20
30
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
I_C MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1
Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
50
10
1
1
Safe Operating Area
V = 20V, T = 100℃
GE
C
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
1 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.01
single pulse
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGP10N60RUF Rev. A1