SGP10N60RUF Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

1400
1200
1000
800
600
400
200
0
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25℃
Cies
Coes
Cres
1
10
Collector - Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 10A
T = 25℃ ━━
C
T_C = 125℃ ------
Toff
Toff
Tf
Tf
100
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃ ━━
C
T = 125℃ ------
C
100
Ton
Tr
10
6
8
10
12
14
16
18
20
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 10A
C
T = 25℃ ━━
C
T = 125℃ ------
Ton
C
100
Tr
10
10
100
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 10A
C
T = 25℃ ━━
C
T_C = 125℃ ------
Eoff
Eon
Eoff
100
10
100
Gate Resistance, R_G [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Toff
Tf
Toff
Tf
100
6
8
10
12
14
16
18
20
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP10N60RUF Rev. A1