SGM2N60UF Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Ultrafast IGBT

100
Common Emitter
V_CC = 300V, V_GE = +15V
R
G
=
200Ω
T = 25oC
C
T_C = 125^oC
Eon
Eon
Eoff
10
Eoff
0.5
1.0
1.5
2.0
2.5
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
250
Ω
Tc = 25^oC
12
9
300 V
6
200 V
V = 100 V
CE
3
0
0
2
4
6
8
10
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
I MAX. (Pulsed)
10
C
I MAX. (Continuous)
C
1
50µs
100µs
1㎳
0.1
DC Operation
0.01
Single Nonrepetitive
Pulse T = 25^oC
C
Curves must be derated
linearly with increase
in temperature
1E-3
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 15. SOA Characteristics
20
10
1
0.1
1
Safe Operating Area
V =20V, T =100^oC
GE
C
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10²
D = 0 .5
10¹
10⁰
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 ^-1
1 0 ^-5
1 0 ^-4
s in g le p u ls e
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
10²
10³
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
©2003 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGM2N60UF Rev. A