SGM2N60UF Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Ultrafast IGBT

SGM2N60UF
Ultrafast IGBT
IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.1 V @ I_C = 1.2A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
D
C
S
G
G
SOT-223
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Maximum Power Dissipation
@ T_a = 25°C
- Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGM2N60UF
600
± 20
2.4
1.2
10
2.1
0.017
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient (PCB Mount) ₍₂₎
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
Max.
60
Units
V
V
A
A
A
W
W/°C
°C
°C
°C
Units
°C/W
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev.A