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RFP30N06LE Datasheet, PDF (5/8 Pages) Harris Corporation – 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RFP30N06LE, RF1S30N06LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
2000
1500
CISS
60
VDD = BVDSS
45
VDD = BVDSS
5.0
3.75
1000
500
0
0
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CRSS
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
30
2.5
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
15
0.25 BVDSS 0.25 BVDSS
RL = 2.0Ω
1.25
IG(REF) = 0.62mA
VGS = 5V
0
0
IG(REF)
20
IG(ACT)
t, TIME (s)
IG(REF)
80
IG(ACT)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VGS
tP
0V
L
DUT
+
VDD
-
IAS
0
0.01Ω
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
0V
VGS
RGS
RL
VDS
+
-
DUT
FIGURE 16. SWITCHING TIME TEST CIRCUIT
©2004 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
RFP30N06LE, RF1S30N06LESM Rev. B1