RFP30N06LE Datasheet, PDF (1/8 Pages) Harris Corporation – 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Data Sheet
RFP30N06LE, RF1S30N06LESM
January 2004
30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
P30N06LE
RF1S30N06LESM TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Features
• 30A, 60V
• r_DS(ON) = 0.047Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1