NDS9936 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)
1.15
I_D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5
V_GS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4
0.6
0.8
1
1.2
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1500
1000
500
C _iss
300
200
100
0.1
f = 1 MHz
V_GS = 0V
C _oss
C _rss
0.2
0.5
1
2
5
10
V_DS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
I_D = 5A
8
V_DS = 15V
6
4
2
0
0
2
4
6
8
10
12
14
16
Q _g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
V_{G S}
R_GEN
G
V_DD
R_L
D
V_OUT
DUT
S
Figure 11. Switching Test Circuit.
t _d(on)
t_on
t_r
90%
t_d(off)
t_off
t_f
90%
V_{O U T}
10%
10%
90%
INVERTED
V_IN
10%
50%
50%
PULSE W IDTH
Figure 12. Switching Waveforms.
NDS9936.SAM