NDS9936 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

NDS9936
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC/DC conversion,
disk drive motor control, and other battery powered circuits
where fast switching, low in-line power loss, and resistance to
transients are needed.
Features
5A, 30V. R_DS(ON) = 0.05Ω @ V_GS = 10V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous @ T_A = 25°C
(Note 1a)
- Continuous @ T_A = 70°C
(Note 1a)
- Pulsed
@ T_A = 25°C
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS9936
30
± 20
± 5.0
± 4.0
± 40
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS9936.SAM