NDS8434A Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – Single P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)
1.075
I_D = -250µA
1.05
1.025
1
0.975
0.95
-50 -25
0
25
50
75 100 125 150
T _J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10 VGS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
6000
4000
3000
2000
1000
Ciss
Coss
500
f = 1 MHz
V_GS = 0 V
Crss
150
0 .1
0 .2
0 .5
1
2
5
10
20
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics.
5
I _D = -7.9A
4
3
V_DS = -5V
-15V
-10V
2
1
0
0
10
20
30
40
Q_g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
V_IN
V_{G S}
R_GEN
G
-V_{D D}
R_L
D
V_OUT
DUT
S
t _d(on)
t_on
t_r
90%
t_d(off)
t_off
t_f
90%
V_{O U T}
V_IN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS8434A Rev.D