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IRF830B Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Characteristics (Continued)
100 D = 0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
sin gle pu lse
※ N otes :
1. Zθ
(t)
JC
=
1.71
℃ /W
M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11-1. Transient Thermal Response Curve for IRF830B
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 3.31 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11-2. Transient Thermal Response Curve for IRFS830B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
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