IRF830B Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Characteristics
Top :
10¹
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
6
5
V_GS = 10V
4
V_GS = 20V
3
2
※ Note : T = 25℃
J
1
0
3
6
9
12
15
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
1200
900
600
300
C_iss
C_oss
C
rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
10⁰
10^-1
2
150^oC
25^oC
-55^oC
※ Notes :
1. V = 40V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_{G0S μ}=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
10
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
※ Note : I = 4.5 A
D
0
0
4
8
12
16
20
24
28
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, November 2001