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IRF710B Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET
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Typical Characteristics (Continued)
D = 0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 3.44 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11-1. Transient Thermal Response Curve for IRF710B
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 5.37 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11-2. Transient Thermal Response Curve for IRFS710B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
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