IRF710B Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IV_DG=^{S =2500V}μ
A
0.8
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
10¹
is Limited by R
DS(on)
100 µs
1 ms
10⁰
10 ms
DC
10^-1
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF710B
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2001 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 1.0 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
10¹
is Limited by R _DS(on)
1 ms
10 ms
10⁰
100 ms
DC
10^-1
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for IRFS710B
Rev. A, November 2001