HGTP20N35G3VL Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
10⁵
10⁴
V_ECS = 20V
10³
10²
10¹
V_CES = 250V
10⁰
10^-1
+25
+50
+75
+100
+125 +150
T_J, JUNCTION TEMPERATURE (^oC)
+175
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
45
40
35
30
25
20
15
10
5
0
+25^oC
V_GE = 5V
+175^oC
2
4
6
8
10
INDUCTANCE (mH)
18
V_CL= 300V, R_GE = 25Ω, V_GE = 5V, L= 550µH
16
I_CE = 6A, R_L= 50Ω
14
I_CE =10A, R_L= 30Ω
12
I_CE =15A, R_L= 20Ω
10
+25
+50
+75
+100 +125 +150
T_J, JUNCTION TEMPERATURE (^oC)
+175
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
1200
1000
800
+25^oC
V_GE = 5V
600
400
+175^oC
200
0
2
4
6
8
10
INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B