HGTP20N35G3VL Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

December 2001
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175^oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
R₁
GATE
R₂
EMITTER
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, R_GE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV_CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_ECS
Collector Current Continuous At V_GE = 5.0V, T_C = +25^oC, Figure 7 . . . . . . . . . . . . . I_C25
At V_GE = 5.0V, T_C = +100^oC . . . . . . . . . . . . . . . . . . . . I_C100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Inductive Switching Current At L = 2.3mH, T_C = +25^o C . . . . . . . . . . . . . . . . . . . . . . I_SCIS
At L = 2.3mH, T
C ^{= +175oC . . . . . . . . . . . . . . . . . . . . . . I}SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T_C = +25^oC . . . . . . . . . . . . . . E_AS
Power Dissipation Total At T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I_GEM is limited to 10mA.
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±10
26
18
775
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/^oC
o_C
o_C
KV
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B