FQPF8N80 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET

Typical Characteristics (Continued)
10⁰
D = 0.5
1 0 ^-1
0 .2
0 .1
0 .0 5
1 0 ^-2
0 .0 2
0 .0 1
sin g le p u lse
※ N o te s :
1 . Z _{θ JC}(t) = 0.7 ℃ /W M a x.
2 . D uty F a ctor, D = t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S qu a re W a ve P u lse D u ra tion [se c]
Figure 11-1. Transient Thermal Response Curve for FQP8N80C
10^{0 D = 0.5}
0.2
0.1
1 0 ^-1
0.05
0.02
0.01
※ N otes :
1. Z _{θ JC}(t) = 2.1 ℃ /W M ax.
2. D uty F actor, D =t₁/t₂
3.
T
JM
-
T
C
=
P
DM
*
Z_θ
(t)
JC
1 0 ^-2
sin gle pu lse
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S qu a re W a ve P ulse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve for FQPF8N80C
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003