FQPF8N80 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
※ Notes :
1. 250μ s Pulse Test
10^-1
2. T_C = 25℃
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
V = 10V
GS
2.0
V = 20V
GS
1.5
※ Note : T_J = 25℃
1.0
0
4
8
12
16
20
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
C
iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
1500
1000
500
C
oss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
C
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
※ Notes :
1. V = 50V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
V = 640V
DS
8
6
4
2
※ Note : I_D = 8A
0
0
10
20
30
40
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2003