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FQP9N90C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET
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Typical Characteristics (Continued)
100
D =0.5
0.2
1 0 -1
0.1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le pu ls e
※ N otes :
1.
Zθ
(t)
JC
=
0.61
℃ /W
M ax.
2. D uty F actor, D =t /t
12
3. T JM - T C = P DM * Zθ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu are W a ve P ulse D uration [sec]
Figure 11-1. Transient Thermal Response Curve for FQP9N90C
100 D = 0 .5
0.2
0.1
1 0 -1 0 .0 5
0 .0 2
0 .0 1
※ N otes :
1. Z θ JC(t) = 1.85 ℃ /W M ax.
2. D uty F actor, D =t1/t2
3. T JM - T C = P DM * Zθ JC(t)
PDM
t1
t2
sing le pu ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu are W a ve P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
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