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| FQP9N90C Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1. V =0V
2.
GS
ID =
250
μ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
DC 100 ms
100
10-1
10-2
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP9N90C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. I = 4.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
â» Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF9N90C
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
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