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| FQG4904 Datasheet, PDF (5/12 Pages) Fairchild Semiconductor – 400V Dual N & P-Channel MOSFET | |||
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Typical Characteristics : N-Channel (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
10-2
10-3
100
Operation in This Area
is Limited by R DS(on)
â» Notes :
1. TA = 25 oC
2. TJ = 150 oC
3. Single Pulse
100 µs
1 ms
10 ms
100 ms
1s
DC
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
â» Notes :
1. V =-10V
GS
2. I =-0.23 A
D
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
TA, Ambient Temperature [â]
Figure 10. Maximum Drain Current
vs. Ambient Temperature
102
D = 0 .5
0 .2
101
0 .1
0 .0 5
0 .0 2
100 0.01
1 0 -1
1 0 -5
1 0 -4
sin g le p u lse
PDM
t1
t2
â» N o te s :
1 . Z θ JA(t) = 7 8 â /W M a x .
2 . D uty F a cto r, D = t1/t2
3 . T JM - T A = P DM * Z θ JA(t)
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
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