FMG1G50US60H Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Molding Type Module

7000
6000
5000
4000
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T_C = 25℃
3000
2000
1000
Coes
Cres
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I_C = 50A
T_C = 25⁰C
T_C = 125⁰C
100
Toff
Tf
1
10
Gate
Resistance,
R
g
[Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V = 300V, V = +/- 15V
CC
GE
R_G = 5.9Ω
T_C = 25⁰C
T = 1250C
C
100
Ton
Tr
10
10 20 30 40 50 60 70 80 90 100
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I_C = 50A
T_C = 25⁰C
T = 1250C
C
100
Ton
Tr
10
1
10
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I_C = 50A
T_C = 25⁰C
T_C = 125⁰C
1000
Eoff
Eon
Eoff
1
10
Gate
Resistance,
R
G
[Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
R
G
=
5.9Ω
T = 250C
C
T = 1250C
C
100
Toff
Tf
Toff
Tf
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G50US60H Rev. A