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FMG1G50US60H Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Molding Type Module
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
VGE = 0V, IC = 50mA
IC = 50A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 50A,
VGE = 15V
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
-- 3460 --
pF
--
480
--
pF
--
140
--
pF
--
20
--
ns
--
30
--
ns
--
60
--
ns
--
110 200
ns
--
1.1
--
mJ
--
1.2
--
mJ
--
2.3
--
mJ
--
20
--
ns
--
30
--
ns
--
70
--
ns
--
250
--
ns
--
1.2
--
mJ
--
2.4
--
mJ
--
3.6
--
mJ
10
--
--
us
--
145 210 nC
--
28
40
nC
--
65
95
nC
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
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