FGD2N40L Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – 400V N-Channel Logic Level IGBT

Typical Performance Characteristics
1000
toff
tfall
ton
1000
toff
tfall
trise
100
V = 300V, V = 4V, R = 51Ω,
CE
GE
GE
T = 25oC
J
0
5
10
15
20
25
I , COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 13. Switching Time Vs. Collector Current
ton
trise
100
V = 300V, V = 4V, I = 2.5A,
CE
GE
CE
T = 25oC
J
0
50
100
150
200
250
300
R , GATE RESISTANCE (Ω)
G
Figure 14. Switching Time Vs. Gate Resistance
10
I = 2.5A, V = 300V
C
CC
T = 25^oC
8
J
6
4
2
0
0
2
4
6
8
10
12
Q , GATE CHARGE (nC)
g
Figure 15. Gate Charge
25
125oC
20
150oC
25oC
15
-40oC
10
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V , GATE TO EMITTER VOLTAGE (V)
GE
Figure 16. Transfer
1.12
I = 1mA
1.10
CE
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-40 -20 0 20 40 60 80 100 120 140 160
T , JUNCTION TEMPERATURE (oC)
J
Figure 17. Normalized Collector to Emitter
Breakdown Voltage Vs. Junction Temperature
5
FGD2N40L Rev. A
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