FGD2N40L Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 400V N-Channel Logic Level IGBT

Typical Performance Characteristics
8
DUTY CYCLE < 0.5%
7
PULSE DURATION = 250µs
T = -40^oC
J
6
5
4
3
I = 15A
CE
2
I = 8A
CE
1
I = 2.5A
CE
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , GATE TO EMITTER VOLTAGE (V)
GE
Figure 7. Collector to Emitter On-State Voltage
Vs. Gate to Emitter Voltage
8
DUTY CYCLE < 0.5%
7
PULSE DURATION = 250µs
T = 25^oC
J
6
5
4
I = 15A
3
CE
I = 8A
2
CE
1
I = 2.5A
CE
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , GATE TO EMITTER VOLTAGE (V)
GE
Figure 8. Collector to Emitter On-State Voltage
Vs. Gate to Emitter Voltage
8
DUTY CYCLE < 0.5%
7
PULSE DURATION = 250µs
T = 70^oC
J
6
5
4
I = 15A
CE
3
I = 8A
2
CE
1
I = 2.5A
CE
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , GATE TO EMITTER VOLTAGE (V)
GE
Figure 9. Collector to Emitter On-State Voltage
Vs. Gate to Emitter Voltage
8
DUTY CYCLE < 0.5%
7
PULSE DURATION = 250µs
T = 125^oC
J
6
5
4
I = 15A
CE
3
I = 8A
CE
2
1
I = 2.5A
CE
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , GATE TO EMITTER VOLTAGE (V)
GE
Figure 10. Collector to Emitter On-State Voltage
Vs. Gate to Emitter Voltage
1.2
I = 1mA
CE
V =V
1.1
CE
GE
1.0
0.9
0.8
0.7
0.6
-40 -20 0 20 40 60 80 100 120 140 160
T , JUNCTION TEMPERATURE(^oC)
J
Figure 11. Normalized Gate to Emitter Threshold
Voltage Vs. Junction Temperature
1000
C
IES
100
10
C
OES
C
RES
V = 0V, f = 1MHz
GE
T = 25oC
C
1
0.1
1
10
100
V , COLLEC TOR TO EM ITTER VOLTAGE (V)
CE
Figure 12. Capacitance Vs. Collector to Emitter
Voltage
FGD2N40L Rev. A
4
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