FGA40N60UFD Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

3000
1000
Eon
100 ^Eoff
Eoff
10
10
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
T_C = 125℃
15
20
25
30
35
40
Collector Current , Ic (A)
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R =15 Ω
L
12 ^{(Tc=25 ℃)}
9
6
300V
200V
Vcc=100V
3
0
0
30
60
90
120
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 ^{Single Nonrepetitive}
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
500
100
10
1
0.1
1
Safe Operating Area
V_GE=20V, T_C=100^oC
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A