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FGA40N60UFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Ultrafast IGBT
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3000
2500
2000
1500
1000
500
0
1
Cies
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
T = 25℃
C
10
30
Collector-Emitter Voltage, VCE (V)
Fig 7. Capacitance Characteristics
1000
Common Emitter
Vcc=300V,V = ± 15V
GE
Ic=20A
Tc = 25℃
Tc = 125℃
Toff
100
Tf
Tf
20
1
10
100 200
Gate Resistance, RG( Ω )
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
100
Ton
10 Tr
10
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
15
20
25
30
35
40
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
300
Common Emitter
Vcc=300V,V = ± 15V
GE
Ic=20A
Tc = 25℃
Ton
100 Tc = 125℃
Tr
10
1
10
Gate Resistance, RG( Ω )
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
1000
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Eon
Eoff
100
50
1
10
100 200
Gate Resistance, RG( Ω )
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
Toff
100 Toff
Tf
Tf
20
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA40N60UFD Rev. A
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