FGA15N120ANTD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200V NPT Trench IGBT

Typical Performance Characteristics (Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
100
tr
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
1000
Common Emitter
V = 600V, V = 15V
CC
GE
I = 15A
C
T = 25oC
C
T = 125oC
C
td(off)
10
td(on)
Common Emitter
V = 600V, V = 15V
CC
GE
I = 15A
C
T = 25oC
C
T = 125oC
C
1
0
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
100
tf
10
0
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
Figure 9. Switching Loss vs. Gate Resistance
Common Emitter
V = 600V, V = 15V
CC
GE
I = 15A
C
10
T = 25oC
C
T = 125oC
C
Eon
Eoff
1
0
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
V = 15V, R = 10Ω
GE
G
100
T = 25oC
C
T = 125^oC
C
tr
10
10
td(on)
15
20
25
30
Collector Current, I [A]
C
Figure 11. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V = 15V, R = 10Ω
GE
G
T = 25^oC
C
T = 125^oC
C
100
td(off)
tf
Figure 12. Switching Loss vs. Collector Current
Common Emitter
V = 15V, R = 10Ω
GE
G
10
T = 25oC
C
T = 125^oC
Eon
C
Eoff
1
10
10
15
20
25
30
Collector Current, I [A]
C
0.1
5
10
15
20
25
30
Collector Current, I [A]
C
5
FGA15N120ANTD Rev. A
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