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FGA15N120ANTD Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200V NPT Trench IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGA15N120ANTD FGA15N120ANTD
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V,
TC = 125°C
IC = 30A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 15A,
VGE = 15V
--
--
3
mA
--
--
± 250
nA
4.5
6.5
8.5
V
--
1.9
2.4
V
--
2.2
--
V
--
2.3
--
V
--
2650
--
pF
--
143
--
pF
--
96
--
pF
--
15
--
ns
--
20
--
ns
--
160
--
ns
--
100
180
ns
--
3
4.5
mJ
--
0.6
0.9
mJ
--
3.6
5.4
mJ
--
15
--
ns
--
20
--
ns
--
170
--
ns
--
150
--
ns
--
3.2
4.8
mJ
--
0.8
1.2
mJ
--
4.0
6.0
mJ
--
120
180
nC
--
16
22
nC
--
50
65
nC
2
FGA15N120ANTD Rev. A
www.fairchildsemi.com
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