FDSS2407 Datasheet, PDF (5/13 Pages) Fairchild Semiconductor – N-Channel Dual MOSFET

Typical Characteristics (Continued) T_A = 25°C unless otherwise noted
100
10
100µs
10
1ms
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY r_DS(ON)
10ms
SINGLE PULSE
T_J
T_A
=
=
MAX
25^oC
RATED
R_θJA = 55^oC/W
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
STARTING T_J = 150^oC
STARTING T_J = 25^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
T_J = 25^oC
10
5
T_J = 150^oC
T_J = -55^oC
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
240
210
I_D = 3.3A
180
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_A = 25^oC
10
V_GS = 10V
5
V_GS = 5V
V_GS = 3.5V
V_GS = 3V
0
0
0.5
1.0
1.5
2.0
2.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
150
120 _{ID = 1A}
90
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.0
0.5
-80
V_GS = 10V, I_D = 3.3A
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDSS2407 Rev. A
5
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