FDSS2407 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – N-Channel Dual MOSFET

December 2004
FDSS2407
N-Channel Dual MOSFET
62V, 3.3A, 132mΩ
Features
„ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8
„ 5V Logic Level feedback signal of the drain to source
voltage. Multiple devices can be wired “OR’d” to a single
monitoring circuit input.
„ Gate Drive Disable Input. Multiple devices controllable by
a single disable transistor.
„ Qualified to AEC Q101
Applications
„ Automotive Injector Driver
„ Solenoid Driver
General Description
This dual N-Channel MOSFET provides added functions as
compared to a conventional Power MOSFET. These are: 1.
A drain to source voltage feedback signal and 2. A gate
drive disable control function that previously required
external discrete circuitry. Including these functions within
the MOSFET saves printed circuit board space. The drain to
source voltage feedback function provides a 5V level output
whenever the drain to source voltage is above 62V. This can
monitor the time an inductive load takes to dissipate its
stored energy. Multiple feedback signals can be wired
“OR’d” together to a single input of the monitoring circuit.
The gate disable function allows the device to be turned off
independent of the drive signal on the gate. This function
permits a second control circuit the ability to deactivate the
load if necessary. It can also be wired “OR’d” allowing
multiple devices to be controlled by a single open collector /
drain control transistor.
Branding Dash
5
1
2
3
4
SO-8
Pin 5 - Drain Feedback Output
Pin 7 - Gate Drive Disable Input
Source 1 1
Gate 1 2
Source 2 3
Gate 2 4
Internal Diagram
8 Drain 1
7 Gate Disable
6 Drain 2
5 Drain FBK
©2004 Fairchild Semiconductor Corporation
1
FDSS2407 Rev. A
www.fairchildsemi.com