FDS8874 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_A = 25°C unless otherwise noted
1.10
I_D = 250µA
1.05
1.00
5000
1000
C_RSS = C_GD
C_ISS = C_GS + C_GD
C_OSS ≅ C_DS + C_GD
0.95
0.90
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
V_GS = 0V, f = 1MHz
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
10
V_DD = 15V
8
6
4
2
WAVEFORMS IN
DESCENDING ORDER:
I_D = 16A
I_D = 1A
0
0
10
20
30
40
50
60
Q_g, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
FDS8874 Rev. A
5
www.fairchildsemi.com