FDS8874 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

August 2005
FDS8874
N-Channel PowerTrench^® MOSFET
30V, 16A, 5.5mΩ
Features
„ r_DS(ON) = 5.5mΩ, V_GS = 10V, I_D = 16A
„ r_DS(ON) = 7.0mΩ, V_GS = 4.5V, I_D = 15A
„ High performance trench technology for extremely low
r_DS(ON)
„ Low gate charge
„ High power and current handling capability
„ 100% Rg tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 25^oC, V_GS = 4.5V, R_θJA = 50^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Package Marking and Ordering Information
Device Marking
FDS8874
Device
FDS8874
Package
SO-8
Reel Size
330mm
©2005 Fairchild Semiconductor Corporation
1
FDS8874 Rev. A
Ratings
30
±20
16
15
Figure 4
265
2.5
20
-55 to 150
25
50
85
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
o_C/W
o_C/W
o_C/W
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com