FDS6984AS_08 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench SyncFET

Typical Characteristics: Q2
10
I_D =8.5A
8
6
4
V_DS = 10V
20V
15V
2
0
0
2
4
6
8
10
12
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
V_GS = 10V
0.1 SINGLE PULSE
R_θJA = 135^oC/W
T_A = 25^oC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
V_GS = 0 V
600
C_iss
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 135°C/W
40
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6984AS Rev A1 (X)