FDS6984AS_08 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench SyncFET

J
May 2008
FDS6984AS
Dual Notebook Power Supply N-Channel PowerTrench^® SyncFET^™
General Description
Features
The FDS6984AS is designed to replace two single
SO-8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes a patented combination of a
MOSFET monolithically integrated with a Schottky
diode.
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
R_DS(on) max= 20 mΩ @ V_GS = 10V
R_DS(on) max= 28 mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (8nC typical)
5.5A, 30V
R_DS(on) max= 31 mΩ @ V_GS = 10V
R_DS(on) max= 40 mΩ @ V_GS = 4.5V
• RoHS Compliant
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6984AS
FDS6984AS
13”
5
4
6
Q1
3
7
2
Q2
8
1
Q2
Q1
30
30
±20
±20
8.5
5.5
30
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
°C/W
40
°C/W
Tape width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6984AS Rev A1(X)